1 - 2 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c85v v dgr t j = 25 c to 150 c; r gs = 1 m 85 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c (mosfet chip capability) 180 a i d(rms) external lead current limit 76 a i dm t c = 25 c, note 1 720 a i ar t c = 25 c 180 a e ar t c = 25 c60mj e as t c = 25 c3j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 560 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque to-264 0.9/6 nm/lb.in. weight plus 247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 85 v v gs(th) v ds = v gs , i d = 8ma 2.0 4.0 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 7 m note 1 single mosfet die features international standard packages low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect fast intrinsic rectifier applications dc-dc converters synchronous rectification battery chargers switched-mode and resonant-mode power supplies dc choppers temperature and lighting controls low voltage relays advantages plus 247 tm package for clip or spring mounting space savings high power density hiperfet tm power mosfets 98637 (7/99) plus 247 tm (ixfx) g d d (tab) g = gate d = drain s = source tab = drain ixfk 180n085 v dss = 85 v ixfx 180n085 i d25 = 180 a r ds(on) = 7 m t rr 250 ns s g d (tab) to-264 aa (ixfk) advanced technical information ixys reserves the right to change limits, test conditions, and dimensions.
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60a note 2 55 75 s c iss 9100 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 4000 pf c rss 2000 pf t d(on) 65 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 90 ns t d(off) r g = 1 (external), 140 ns t f 55 ns q g(on) 320 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 65 nc q gd 170 nc r thjc 0.22 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 180 a i sm repetitive; 720 a pulse width limited by t jm v sd i f = 100a, v gs = 0 v, note 1 1.3 v t rr 250 ns q rm 1.2 c i rm 10 a i f = 50a,-di/dt = 100 a/ s, v r = 50 v note: 1. pulse width limited by t jm 2. pulse test, t 300 s, duty cycle d 2 % ixfk 180n085 ixfx 180n085 plus247 tm (ixfx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 aa outline ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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